power amplifier maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 80 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 4 v i c collector current -continuous 0.5 a p c collector power dissipation 625 mw t j junction temperature 150 t stg storage temperature -55-150 r ja thermal resistance,junction to ambient 417 /w electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 80 v collector-emitter breakdown voltage v (br)ceo i c = 1ma , i b =0 80 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 4 v collector cut-off current i cbo v cb =80v, i e =0 0.1 a collector cut-off current i ceo v ce =60v, i b =0 0.1 a emitter cut-off current i ebo v eb =3v, i c =0 0.1 a h fe1 v ce =1v, i c = 100ma 100 400 dc current gain h fe2 v ce =1v, i c = 10ma 100 collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma 0.25 v base-emitter saturation voltage v be(sat) i c = 100ma, i b =10ma 1.2 v transition frequency f t v ce =2v, i c = 10ma f = 100mhz 100 mhz MPSA06 to-92 transistor (npn) features ? to-92 dimensions in inches and (millimeters) 1 . em i tte r 2. bas e 3. col l ect or tiger electronic co.,ltd
typical characteristics MPSA06 to-92 transistor (npn)
MPSA06 to-92 transistor (npn)
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